購買 TK6A80E,S4X與BYCHPS
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VGS(TH)(最大)@標識: | 4V @ 600µA |
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Vgs(最大): | ±30V |
技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | TO-220SIS |
系列: | π-MOSVIII |
RDS(ON)(最大值)@標識,柵極電壓: | 1.7 Ohm @ 3A, 10V |
功率耗散(最大): | 45W (Tc) |
封装: | Tube |
封裝/箱體: | TO-220-3 Full Pack, Isolated Tab |
其他名稱: | TK6A80E,S4X(S TK6A80ES4X |
工作溫度: | 150°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商標準交貨期: | 12 Weeks |
製造商零件編號: | TK6A80E,S4X |
輸入電容(Ciss)(Max)@ Vds: | 1350pF @ 25V |
柵極電荷(Qg)(Max)@ Vgs: | 32nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
展開說明: | N-Channel 800V 6A (Ta) 45W (Tc) Through Hole TO-220SIS |
驅動電壓(最大Rds開,最小Rds開): | 10V |
漏極至源極電壓(Vdss): | 800V |
描述: | MOSFET N-CH 800V TO220SIS |
電流 - 25°C連續排水(Id): | 6A (Ta) |
Email: | [email protected] |