購買 IRFD214與BYCHPS
購買即有保證
VGS(TH)(最大)@標識: | 4V @ 250µA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | 4-DIP, Hexdip, HVMDIP |
系列: | - |
RDS(ON)(最大值)@標識,柵極電壓: | 2 Ohm @ 270mA, 10V |
功率耗散(最大): | 1W (Ta) |
封装: | Tube |
封裝/箱體: | 4-DIP (0.300", 7.62mm) |
其他名稱: | *IRFD214 |
工作溫度: | -55°C ~ 150°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商零件編號: | IRFD214 |
輸入電容(Ciss)(Max)@ Vds: | 140pF @ 25V |
柵極電荷(Qg)(Max)@ Vgs: | 8.2nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
展開說明: | N-Channel 250V 450mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP |
漏極至源極電壓(Vdss): | 250V |
描述: | MOSFET N-CH 250V 450MA 4-DIP |
電流 - 25°C連續排水(Id): | 450mA (Ta) |
Email: | sales@bychips.com |