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IPD65R600C6BTMA1
- 型號:
- IPD65R600C6BTMA1
- 描述:
- MOSFET N-CH 650V 7.3A TO252
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 19869 Pieces
簡單介紹
BYCHIPS是 IPD65R600C6BTMA1的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的IPD65R600C6BTMA1購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 3.5V @ 210µA |
|---|---|
| Vgs（最大）: | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO252-3 |
| 系列: | CoolMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 600 mOhm @ 2.1A, 10V |
| 功率耗散（最大）: | 63W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 其他名稱: | IPD65R600C6 IPD65R600C6-ND IPD65R600C6TR-ND SP000745020 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | IPD65R600C6BTMA1 |
| 輸入電容（Ciss）（Max）@ Vds: | 440pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 23nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 650V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3 |
| 驅動電壓（最大Rds開，最小Rds開）: | 10V |
| 漏極至源極電壓（Vdss）: | 650V |
| 描述: | MOSFET N-CH 650V 7.3A TO252 |
| 電流 - 25°C連續排水（Id）: | 7.3A (Tc) |
| Email: | [email protected] |
IPD65R600C6BTMA1的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
 |
IPD65R600C6 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252 | 在線詢價 |
|
IPD65R600E6ATMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | 在線詢價 |
|
IPD65R660CFDBTMA1 | Infineon Technologies | MOSFET N-CH 650V 6A TO252 | 在線詢價 |
|
IPD65R660CFDAATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | 在線詢價 |
|
IPD65R600E6BTMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | 在線詢價 |
 |
IPD65R600C6ATMA1 | Infineon Technologies | LOW POWER_LEGACY | 在線詢價 |
|
IPD65R650CEATMA1 | Infineon Technologies | MOSFET N-CH 650V 10.1A TO252 | 在線詢價 |
|
IPD65R650CEAUMA1 | Infineon Technologies | MOSFET N-CH 650V 7A TO-252 | 在線詢價 |
|
IPD65R660CFDATMA1 | Infineon Technologies | MOSFET N-CH 650V 6A TO252 | 在線詢價 |
|
IPD65R380C6BTMA1 | Infineon Technologies | MOSFET N-CH 650V 10.6A TO252-3 | 在線詢價 |
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